CMA30E1600PB single thyristor thyristor 2 1 3 part number CMA30E1600PB backside: anode tav t vv 1.42 rrm 30 1600 = v= v i= a features / advantages: applications: package: thyristor for line frequency planar passivated chip long-term stability line rectifying 50/60 hz softstart ac motor control dc motor control power converter ac power control lighting and temperature control to-220 industry standard outline rohs compliant epoxy meets ul 94v-0 ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PB v = v a2s a2s a2s a2s symbol definition ratings typ. max. i v i a v t 1.42 r 0.5 k/w min. 30 v v 10 t = 25c vj t = c vj ma 2 v = v t = 25c vj i = a t v t = c c 115 p tot 250 w t = 25c c 30 1600 forward voltage drop total power dissipation conditions unit 1.80 t = 25c vj 125 v t0 v 0.90 t = c vj 150 r t 17 m ? v 1.42 t = c vj i = a t v 30 1.92 i = a 60 i = a 60 threshold voltage slope resistance for power loss calculation only a 125 v v 1600 t = 25c vj i a 47 p gm w t = 30 s 10 max. gate power dissipation p t = c c 150 w t = 5 p p gav w 0.5 average gate power dissipation c j 13 j unction capacitance v = v 400 t = 25c f = 1 mhz r vj pf i tsm t = 10 ms; (50 hz), sine t = 45c vj max. forward surge current t = c vj 150 i2t t = 45c value for fusing t = c 150 v = 0 v r v = 0 v r v = 0 v v = 0 v t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine t = 10 ms; (50 hz), sine t = 8,3 ms; (60 hz), sine vj r vj r thjc thermal resistance junction to case t = c vj 150 260 280 240 240 a a a a 220 240 340 325 1600 300 s rms forward current t(rms) tav 180 sine average forward current (di/dt) cr a/s 150 repetitive, i = t vj = 125c; f = 50 hz critical rate of rise of current v gt gate trigger voltage v= 6 v t = c 25 (dv/dt) t=125c critical rate of rise of voltage a/s 500 v/s t = s; ia;v = ? v r = ; method 1 (linear voltage rise) vj d vj 90 a t p g =0.2 di /dt a/s; g =0.2 d drm cr v = ? v d drm gk 500 1.3 v t= c -40 vj i gt gate trigger current v= 6 v t = c 25 d vj 28 ma t= c -40 vj 1.6 v 50 ma v gd gate non-trigger voltage t= c vj 0.2 v i gd gate non-trigger current 1ma v = ? v d drm 150 latching current t= c vj 90 ma i l 25 ts p =10 ia; g = 0.2 di /dt a/s g =0.2 holding current t= c vj 60 ma i h 25 v= 6 v d r = gk gate controlled delay time t= c vj 2s t gd 25 ia; g = 0.5 di /dt a/s g =0.5 v = ? v d drm turn-off time t= c vj 150 s t q di/dt = a/s; 10 dv/dt = v/s; 20 v = r 100 v; i a; t =30 v = ? v d drm t s p = 200 non-repet., i = 30 a t 150 r thch thermal resistance case to heatsink k/w thyristor 1700 rrm/drm rsm/dsm max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage r/d reverse current, drain current t t r/d r/d 200 0.50 ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PB ratings xxxxxx yyww z logo part number date code lot # abcdef product markin g a ssembly line c m a 30 e 1600 pb part number thyristor (scr) thyristor (up to 1800v) single thyristor to-220ab (3) = = = cla30e1200pb to-220ab (3) 1200 current rating [a] reverse voltage [v] = = = = package t vj c m d nm 0.6 mounting torque 0.4 t stg c 150 storage temperature -55 weight g 2 symbol definition typ. max. min. conditions virtual junction temperature unit f c n 60 mounting force with clip 20 i rms rms current 35 a per terminal 150 -40 cs22-12io1m cla30e1200pc to-220abfp (3) to-263ab (d2pak) (2) 1200 1200 cla30e1200hb cs22-08io1m to-247ad (3) to-220abfp (3) 1200 800 to-220 similar part package voltage class cma30e1600pn to-220abfp (3) 1600 delivery mode quantity code no. part number marking on product ordering CMA30E1600PB 503348 tube 50 CMA30E1600PB standard threshold voltage v 0.9 m ? v 0 max r 0 max slope resistance * 14 equivalent circuits for simulation t = vj i v 0 r 0 thyristor 150c * on die level ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PB dim. millimeter inches min. max. min. max. a 4.32 4.82 0.170 0.190 a1 1.14 1.39 0.045 0.055 a2 2.29 2.79 0.090 0.110 b 0.64 1.01 0.025 0.040 b2 1.15 1.65 0.045 0.065 c 0.35 0.56 0.014 0.022 d 14.73 16.00 0.580 0.630 e 9.91 10.66 0.390 0.420 e 2.54 bsc 0.100 bsc h1 5.85 6.85 0.230 0.270 l 12.70 13.97 0.500 0.550 l1 2.79 5.84 0.110 0.230 ?p 3.54 4.08 0.139 0.161 q 2.54 3.18 0.100 0.125 3x b2 e ?p q d l1 l 3x b 2x e c a2 h1 a1 a 123 4 2 1 3 outlines to-220 ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
CMA30E1600PB 04080120160 0 10 20 30 40 0.01 0.1 1 100 150 200 250 0.51.01.52.0 0 10 20 30 40 50 60 1 10 100 1000 10000 0.0 0.2 0.4 0.6 i t [a] t[s] v t [v] 234567890 1 1 10 100 1000 i 2 t [a 2 s] t[ms] i tsm [a] t vj = 25c t vj =125c t vj =45c 50 hz, 80% v rrm t vj = 125c t vj = 45c v r =0 v i tavm [a] t case [c] z thjc [k/w] t[ms] fig. 1 forward characteristics fig. 2 surge overload current i tsm : crest value, t: duration fig. 3 i 2 t versus time (1-10 s) fig. 4 gate voltage & gate current triggering: a = no; b = possible; c = safe fig. 6 max. forward current at case temperature fig. 7 transient thermal impedance junction to case fig. 5 gate controlled delay time t gd 0 10203040 0 20 40 60 i f(av) [a] p (av) [w] fig. 7a power dissipation versus direct output current fig. 7b and ambient temperature 0 50 100 150 t amb [c] r thha 0.6 0.8 1.0 2.0 4.0 8.0 dc = 1 0.5 0.4 0.33 0.17 0.08 dc = 1 0.5 0.4 0.33 0.17 0.08 t vj = 125c 150c ir thi (k/w) t i (s) 10.08 0.01 2 0.06 0.0001 30.2 0.02 40.05 0.2 50.11 0.11 0255075 0 1 2 3 4 v g [v] i g [ma] i gd : t vj =125c i gd :t vj =25c i gd :t vj =25c i gd :t vj =0c i gd :t vj =-40c -2 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 t gd [ s] i g [a] lim. typ. t vj =125c thyristor ixys reserves the right to change limits, conditions and dimensions. 20130118a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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